smd type ic smd type ic KDS4470 features 12.5a,40v.r ds(on) =9m @v gs =10v low gate charge (45 nc typical) high performance trench technology for extremely low r ds(on) high power and current handling capability absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 40 v gate to source voltage v gs +30/-20 v drain current continuous (note 1a) 12.5 a drain current pulsed 50 a power dissipation (note 1a) 2.5 power dissipation (note 1b) 1.4 power dissipation (note 1c) 1.2 operating and storage temperature range t j ,t stg -55to175 thermal resistance junction to ambient (note 1a) r ja 50 /w thermal resistance junction to ambient (note 1c) r ja 125 /w thermal resistance junction to case (note 1) r jc 25 /w i d p d w 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic s m d ty p e m o s f e t s m d ty p e m o s f e t product specification
smd type ic smd type ic electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-source avalanche energy e as single pulse,v dd =40v,i d =12.5a( not 2) 370 mj drain-source avalanche current i as ( not 2) 12.5 a drain-source breakdown voltage b vdss v gs =0v,i d = 250 a 40 v breakdown voltage temperature coefficient i d = 250 a, referenced to 25 42 mv/ zero gate voltage drain current i dss v ds =32v,v gs =0v 1 a gate-body leakage, forward i gssf v gs =30v,v ds = 0 v 100 na gate-body leakage, reverse i gssr v gs =-20v,v ds = 0 v -100 na gate threshold voltage v gs(th) v ds =v gs ,i d = 250 a 23.95 v gate threshold voltage temperature coefficient i d = 250 a, referenced to 25 -8 mv/ v gs =10v,i d = 12.5 a 6 9 v gs =10v,i d =12.5 a,t j = 125 914 on-state drain current i d(on) v gs =10v,v ds =5v 25 a forward transconductance g fs v ds = 10v, i d = 12.5 a 45 s input capacitance c iss 2659 pf output capacitance c oss 605 pf reverse transfer capacitance c rss 298 pf turn-on delay time t d(on) 14 25 ns turn-on rise time tr 12 22 ns turn-off delay time t d(off) 37 59 ns turn-off fall time t f 29 46 ns total gate charge q g 45 63 nc gate-source charge q gs 27 nc gate-drain charge q gd 5nc maximum continuous drain-source diode forward current i s 2.1 a drain-source diode forward voltage v sd v gs =0v,i s = 2.1 a (not 2) 0.7 1.2 v diode reverse recovery time trr i f = 12.5 a, d if /d t = 100 a/ s 33 ns diode reverse recovery charge qrr 39 nc v ds =20v,i d = 12.5 a,v gs =10v (note 2) m r ds(on) static drain-source on-resistance v dd =20v,i d =1a,v gs =10v,r gen = 6 (note 2) v ds =20v,v gs =0v,f=1.0mhz 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com smd type ic smd type ic KDS4470 smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic smd type ic s m d ty p e m o s f e t s m d ty p e m o s f e t product specification
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